快约直播免费版app下载 - 快约直播app大全下载最新版本免费安装软件

13215150267
星火太陽(yáng)能和你一起了解更多太陽(yáng)能資訊

光伏基礎(chǔ)原理

返回列表 來(lái)源: 陽(yáng)光工匠 發(fā)布日期: 2022.06.30 瀏覽次數(shù):
光的特性

各個(gè)區(qū)間波長(zhǎng)的分布見(jiàn)下圖,可見(jiàn)光,又可分為紫光(390-450)藍(lán)光(450--490nm),綠光(490-570nm),紅光(620-780nm).


光子的能量跟波長(zhǎng)成反比,h為普朗克常數(shù),C為光速,都為常量。下面公式1是基于把光當(dāng)成電磁波來(lái)看。


大氣質(zhì)量:太陽(yáng)光穿過(guò)大氣層的路徑,AM1.5為1.5倍垂直入射穿過(guò)大氣層的距離,也就是θ=48度。AM0條件下,太陽(yáng)能垂直入射到地球最大的光強(qiáng)為1366W/㎡。


二極管以及光伏發(fā)電原理


價(jià)帶:共價(jià)鍵束縛載流子自由移動(dòng),不能參與導(dǎo)電。

導(dǎo)帶:電子可以自由移動(dòng)。

禁帶:介于價(jià)帶和導(dǎo)帶之間。

禁帶寬度:一個(gè)電子從價(jià)帶運(yùn)動(dòng)到能參與導(dǎo)電的自由狀態(tài)所需要吸收的最低能量值,硅材料禁帶寬度1.12ev,對(duì)應(yīng)110nm波段。

載流子:電子和空穴都能參與導(dǎo)電并都稱為。

電子移向?qū)У倪\(yùn)動(dòng)導(dǎo)致了電子本身的移動(dòng)。

電子移動(dòng)過(guò)程還產(chǎn)生了空穴在價(jià)帶中的移動(dòng)。

本征載流子:沒(méi)有注入能改變載流子濃度的雜質(zhì)的半導(dǎo)體材料叫做本征材料,濃度跟材料本身以及溫度有關(guān)系,且電子空穴數(shù)目相等。

N型半導(dǎo)體:摻雜后多子帶負(fù)電,例如摻磷。

P型半導(dǎo)體:摻雜后多子帶正電,例如摻硼,摻鎵。

晶體硅的原子結(jié)構(gòu),最外層電子由四對(duì)共用電子對(duì)組成。

太陽(yáng)能電池片最重要的參數(shù)

禁帶寬度:電子從從價(jià)帶到導(dǎo)帶躍遷需要的最小能量;

導(dǎo)帶自由載流子數(shù)量;

光照條件下產(chǎn)生和復(fù)合的自由載流子數(shù)量。


平衡載流子濃度

本征載流子濃度由材料以及溫度所決定,溫度越高,載流子濃度越高。

平衡載流子濃度:在沒(méi)有偏置情況下,導(dǎo)帶和價(jià)帶的載流子數(shù)量稱為平衡載流子濃度。多子數(shù)量等于本征自由載流子數(shù)量加上參雜的自由載流子數(shù)量,一般情況下,參雜的載流子數(shù)量大于本征載流子數(shù)量的幾個(gè)數(shù)量級(jí),也就是約等于參雜濃度。

Ni: 本征載流子數(shù)量, n0p0分別代表電子和空穴載流子數(shù)量。


光的吸收:

1.Eph

2.Eph=Eg 光子的能量剛剛好足夠激發(fā)出一個(gè)電子-空穴對(duì),能量被完全吸收。

3.Eph>Eg 光子能量大于禁帶寬度并被強(qiáng)烈吸收。

吸收深度:


400nm以下紫外波段,在硅片厚度0.1um處被完全吸收。

400—800nm可見(jiàn)光波段,在硅片厚度10um處被完全吸收。

800-1000nm近紅外波段,在硅片厚度100um處被完全吸收。

1100nm近紅外處波段,能穿透硅片厚度超過(guò)1000um。

載流子的產(chǎn)生率:


不同波段光在電池片厚度的產(chǎn)生率: 藍(lán)光在0.1um處被完全吸收;紅光在50um處幾乎被完全吸收; 近紅外光在100um處還能激發(fā)表面90%的載流子,吸收很慢。

全波段總的生成率:在電池片表面,因短波段基本集中在表面,故激發(fā)的載流子數(shù)量最多,然后隨著硅片厚度增加光的吸收逐步遞減,導(dǎo)致載流子數(shù)量逐步減少。


三種復(fù)合:

? 輻射復(fù)合:電子空穴的復(fù)合,激發(fā)出近似禁帶寬度的1100nm的光,也是EL/PL發(fā)光的原理。

? 俄歇復(fù)合:涉及兩個(gè)電子,一個(gè)空穴。電子跟空穴復(fù)合,傳遞能量給另外一個(gè)電子做運(yùn)動(dòng),沒(méi)有光激發(fā)。主要體現(xiàn)在重?fù)诫s或者加熱高溫材料。

? 肖克萊-雷德-霍爾復(fù)合:也叫復(fù)合中心的復(fù)合或者缺陷復(fù)合,直接吸收電子或者空穴,輻射出能量非常弱的光。

擴(kuò)散長(zhǎng)度/少子壽命

少子擴(kuò)散長(zhǎng)度:在復(fù)合之前一個(gè)載流子從產(chǎn)生處開(kāi)始運(yùn)動(dòng)的平均路程。

少子壽命:在復(fù)合之前一個(gè)載流子從產(chǎn)生到復(fù)合的平均時(shí)間。

表面復(fù)合

半導(dǎo)體表面的缺陷是由于晶格排列在表面處的中斷照成的,即在表面處產(chǎn)生掛鍵,所以電池表面是一個(gè)復(fù)合率非常高的區(qū)域。減少掛鍵的數(shù)目可以通過(guò)在半導(dǎo)體表面處生長(zhǎng)一層薄膜以連接這些掛鍵,這種方法也叫做表面鈍化。


載流子的運(yùn)動(dòng):在大多數(shù)情況下,電子是電場(chǎng)相反的方向運(yùn)動(dòng)。

擴(kuò)散:

在兩個(gè)不同濃度的區(qū)域之間將會(huì)出現(xiàn)載流子梯度。載流子將從高濃度區(qū)域流向低濃度區(qū)域。

漂移:

由外加電場(chǎng)所引起的載流子運(yùn)動(dòng)叫“漂移運(yùn)動(dòng)”。

PN結(jié):

n型半導(dǎo)體區(qū)域的電子濃度很高,而p型區(qū)域的空穴濃度很高,所以電子從n型區(qū)擴(kuò)散到p型區(qū),同理,空穴從P型區(qū)擴(kuò)散到n型區(qū)。當(dāng)電子和空穴運(yùn)動(dòng)到pn結(jié)的另一邊時(shí),也在雜質(zhì)原子區(qū)域留下了與之相反的電荷,這種電荷被固定在晶格當(dāng)中不能移動(dòng)。在n型區(qū),被留下的便是帶正電的原子核,相反,在p型區(qū),留下的是帶負(fù)電的原子核。于是,一個(gè)從n型區(qū)的正離子區(qū)域指向p型區(qū)的負(fù)離子區(qū)域的電場(chǎng)E就建立起來(lái)了。這個(gè)電場(chǎng)區(qū)域叫做“耗盡區(qū)”,因?yàn)榇穗妶?chǎng)能迅速把自由載流子移走,因此,這個(gè)區(qū)域的自由載流子是被耗盡的。

正向偏壓下的二極管(核心知識(shí)點(diǎn))

正向偏壓(也叫正向偏置)指的是在器件兩邊施加電壓,以使得pn結(jié)的內(nèi)建電場(chǎng)減小。電場(chǎng)的減小將破壞pn結(jié)的平衡,即減小了對(duì)載流子從pn結(jié)的一邊到另一邊的擴(kuò)散運(yùn)動(dòng)的阻礙,增大擴(kuò)散電流。

從pn結(jié)的一端到另一端的擴(kuò)散運(yùn)動(dòng)的增加導(dǎo)致了少數(shù)載流子(少子)往耗散區(qū)邊緣的注入。這些少數(shù)載流子由于擴(kuò)散而漸漸遠(yuǎn)離pn結(jié)并最終與多數(shù)載流子(多子)復(fù)合。在正向偏置下的擴(kuò)散電流也是復(fù)合電流。復(fù)合的速度越高,通過(guò)pn結(jié)的擴(kuò)散電流就越大?!鞍碉柡碗娏鳌保↖0)是區(qū)別兩種不同二極管的非常重要的參數(shù)。I0是衡量一個(gè)器件復(fù)合特點(diǎn)的標(biāo)準(zhǔn),二極管的復(fù)合速率越大,I0也越大。

反向偏壓

反向偏置電壓是指在器件兩端加電場(chǎng),以使pn結(jié)增大。在pn結(jié)中的內(nèi)建電場(chǎng)越大,載流子能從pn結(jié)一段擴(kuò)散至另一端的概率就越小,即擴(kuò)散電流就越小。

理想二極管方程:


I為通過(guò)二極管的凈電流;

I0為暗飽和電流(在沒(méi)有光照情況下輸出的電流),I0隨著T的升高而增大。在溫度為300k時(shí),KT/q=25.85mV。

V是施加在二極管兩端的電壓;

q和k分別代表電荷的絕對(duì)值和玻耳茲曼常數(shù);

T則表示絕對(duì)溫度(K)。

收集概率:(可結(jié)合載流子產(chǎn)生率對(duì)比)

“收集概率”描述了光照射到電池的某個(gè)區(qū)域產(chǎn)生的載流子被pn結(jié)收集并參與到電流流動(dòng)的概率,它的大小取決于光生載流子需要運(yùn)動(dòng)的距離和電池的表面特性。在耗散區(qū)的所有光生載流子的收集概率都是相同的,因?yàn)樵谶@個(gè)區(qū)域的電子空穴對(duì)會(huì)被電場(chǎng)迅速地分開(kāi)。當(dāng)載流子在與電場(chǎng)的距離大于擴(kuò)散長(zhǎng)度的區(qū)域產(chǎn)生時(shí),那么它的收集概率是相當(dāng)?shù)偷摹O嗨频?,如果載流子是在靠近電池表面這樣的高復(fù)合區(qū)的區(qū)域產(chǎn)生,那么它將會(huì)被復(fù)合。下面的圖描述了表面鈍化和擴(kuò)散長(zhǎng)度對(duì)收集概率的影響。


量子效率:

所謂“量子效率”,即太陽(yáng)能電池所收集的載流子的數(shù)量與入射光子的數(shù)量的比例。量子效率即可以與波長(zhǎng)相對(duì)應(yīng)又可以與光子能量相對(duì)應(yīng)。如果某個(gè)特定波長(zhǎng)的所有光子都被吸收,并且其所產(chǎn)生的少數(shù)載流子都能被收集,則這個(gè)特定波長(zhǎng)的所有光子的量子效率都是相同的。而能量低于禁帶寬度的光子的量子效率為零。下圖將描述理想太陽(yáng)能電池的量子效率曲線。


光伏 效應(yīng)(核心知識(shí)點(diǎn))

電池開(kāi)路的情況下,pn結(jié)的正向偏壓處在新的一點(diǎn),此時(shí),光生電流大小等于擴(kuò)散電流大小,且方向相反,即總的電流為零。

電池短路的情況下,將不會(huì)出現(xiàn)電荷的聚集,因?yàn)檩d流子都參與了光生電流的流動(dòng),短路電流等于光生電流(同樣等于開(kāi)壓狀態(tài)下內(nèi)部擴(kuò)散電流)。

工作狀態(tài)下,其電流等于光生電流減去太陽(yáng)能電池內(nèi)部擴(kuò)散電流。

短路電流等于光生電流,且等于內(nèi)建電場(chǎng)作用下的漂移電流,也是電池片能提供的最大的電流。

開(kāi)路電壓下,光生載流子導(dǎo)致正向偏壓從而消弱內(nèi)建電場(chǎng),增加擴(kuò)散電流,光生電流等于擴(kuò)散電流且方向相反。


工作狀態(tài)下,流出電池的電流大小就等于光生電流與擴(kuò)散電流的差。

內(nèi)建電場(chǎng)代表著對(duì)前置擴(kuò)散電流的障礙,所以電場(chǎng)減小的同時(shí)也增大擴(kuò)散電流。


復(fù)合機(jī)制對(duì)開(kāi)路電壓的影響(核心難點(diǎn))

PN結(jié)邊緣的少子數(shù)量,越少,耗盡區(qū)越寬,則需要增加摻雜濃度。

擴(kuò)散長(zhǎng)度。 摻雜濃度越高,擴(kuò)散長(zhǎng)度越低(擴(kuò)散電流越大),則需要降低摻雜濃度。

二者需要達(dá)到平衡。


ECV曲線解讀


體電阻(硅片電阻率):電阻是縱向的,電子垂直移動(dòng)然后到達(dá)表面。故移動(dòng)的距離為電池片厚度,橫截面為電池片面積,即R=ρW/A

方塊電阻:電阻是橫向的,不是垂直縱向,即橫截面積等于距離L乘以厚度T,所以電阻R=ρ L / (L*T),只要L是正方形邊長(zhǎng),則方塊電阻只跟電阻率以及N區(qū)厚度有關(guān)系。

方塊電阻的測(cè)量非常容易,通過(guò)四探針測(cè)試方法,外面兩根探針提供電流,中間兩根探針處產(chǎn)生壓降,N區(qū)和P區(qū)之間的PN結(jié)做為結(jié)緣體。注意測(cè)試必須在暗室。


太能能電池等效電路圖(核心知識(shí)點(diǎn))


引起串聯(lián)電阻的因素有三種:

第一,穿過(guò)電池發(fā)射區(qū)和基區(qū)的電流流動(dòng);

第二,金屬電極與硅之間的接觸電阻;

第三便是頂部和背部的金屬電阻。串聯(lián)電阻對(duì)電池的主要影響是減小填充因子,此外,當(dāng)阻值過(guò)大時(shí)還會(huì)減小短路電流。串聯(lián)電阻并不會(huì)影響到電池的開(kāi)路電壓,因?yàn)榇藭r(shí)電池的總電流為零,所以串聯(lián)電阻也為零。

并聯(lián)電阻RSH造成的顯著的功率損失通常是由于制造缺陷引起的。

溫度效應(yīng)

本征載流子隨著溫度高,濃度高,導(dǎo)致暗電流增加,復(fù)合增加,從而導(dǎo)致開(kāi)路電壓下降。

Characteristics of light



See the following figure for the wavelength distribution in each section. Visible light can be divided into purple light (390-450), blue light (450--490nm), green light (490-570nm) and red light (620-780nm)





The energy of a photon is inversely proportional to the wavelength. H is the Planck constant and C is the speed of light, both of which are constants. The following formula 1 is based on treating light as an electromagnetic wave.





Atmospheric quality: the path of sunlight through the atmosphere. AM1.5 is 1.5 times the distance of vertical incidence through the atmosphere, i.e θ= 48 degrees. Under the condition of AM0, the maximum intensity of solar energy vertically incident on the earth is 1366w/ ㎡.





Diode and photovoltaic power generation principle



Valence band: covalent bonds bind carriers to move freely and cannot participate in conduction.



Conduction band: electrons can move freely.



Forbidden band: between valence band and conduction band.



Band gap width: the lowest energy value that an electron needs to absorb from the valence band to the free state that can participate in conduction. The band gap width of silicon material is 1.12eV, corresponding to the 110Nm band.



Carrier: both electrons and holes can participate in conducting electricity and are called.



The movement of the electron towards the conduction band results in the movement of the electron itself.



The electron movement process also produces the movement of holes in the valence band.



Intrinsic carriers: semiconductor materials without impurities that can change the carrier concentration are called intrinsic materials. The concentration is related to the material itself and temperature, and the number of electron holes is equal.



N-type semiconductor: after doping, many subbands are negatively charged, such as phosphorus doping.



P-type semiconductor: multi subband positive charge after doping, such as boron and gallium.



The atomic structure of crystalline silicon in which the outermost electrons are composed of four common electron pairs.



The most important parameters of solar cells



Band gap width: the minimum energy required for electron transition from valence band to conduction band;



Number of free carriers in conduction band;



The number of free carriers produced and combined under illumination.





Equilibrium carrier concentration



The intrinsic carrier concentration is determined by the material and temperature. The higher the temperature, the higher the carrier concentration.



Equilibrium carrier concentration: the number of carriers in the conduction and valence bands without bias is called the equilibrium carrier concentration. The number of multi carriers is equal to the number of intrinsic free carriers plus the number of heterozygous free carriers. Generally, the number of heterozygous carriers is greater than several orders of magnitude of the number of intrinsic carriers, that is, it is about equal to the heterozygous concentration.



Ni: number of intrinsic carriers, n0p0 represents the number of electron and hole carriers respectively.





Light absorption:



1. Eph


2. The energy of eph=eg photon is just enough to excite an electron hole pair, and the energy is completely absorbed.



3. The photon energy of eph>eg is larger than the band gap and is strongly absorbed.



Absorption depth:





The ultraviolet band below 400nm is completely absorbed at the thickness of 0.1um.



In the visible light band of 400-800nm, it is completely absorbed at the silicon wafer thickness of 10um.



800-1000nm near-infrared band, fully absorbed at 100um silicon wafer thickness.



At 1100nm near-infrared wave band, it can penetrate the thickness of silicon wafer more than 1000um.



Carrier generation rate:





The generation rate of light at different wavelengths in the thickness of the cell: blue light is completely absorbed at 0.1um; Red light is almost completely absorbed at 50um; Near infrared light can also excite 90% of the surface carriers at 100um, and the absorption is very slow.



Total generation rate of full band: on the surface of the cell, the number of excited carriers is the largest because the short band is basically concentrated on the surface, and then the absorption of light decreases gradually with the increase of the thickness of the silicon wafer, resulting in the gradual reduction of the number of carriers.





Three combinations:



? radiation recombination: the recombination of electron holes excites 1100nm light with approximate band gap width, which is also the principle of el/pl luminescence.



? Auger recombination: two electrons and one hole are involved. Electrons combine with holes to transfer energy to another electron for movement. There is no light excitation. Mainly reflected in heavily doped or heated high-temperature materials.



? Shockley Reid hall recombination: also known as recombination of recombination centers or defect recombination, it directly absorbs electrons or holes and radiates very weak light.



Diffusion length / minority carrier lifetime



Minority carrier diffusion length: the average path of a carrier from the point of origin before recombination.



Minority carrier lifetime: the average time from generation to recombination of a carrier before recombination.



Surface compounding



The defects on the semiconductor surface are caused by the interruption of lattice arrangement at the surface, that is, the hanging bond is generated at the surface, so the battery surface is a region with very high recombination rate. To reduce the number of hanging keys, a thin film can be grown on the semiconductor surface to connect these hanging keys. This method is also called surface passivation.





Carrier motion: in most cases, electrons move in the opposite direction of the electric field.



Diffusion:



There will be a carrier gradient between two regions with different concentrations. The carrier will flow from the high concentration region to the low concentration region.



Drift:



The carrier motion caused by the applied electric field is called "drift motion".



PN junction:



The electron concentration in the n-type semiconductor region is very high, while the hole concentration in the p-type region is very high, so electrons diffuse from the n-type region to the p-type region. Similarly, holes diffuse from the p-type region to the n-type region. When electrons and holes move to the other side of the PN junction, they also leave opposite charges in the impurity atom region, which are fixed in the lattice and cannot move. In the n-type region, the positively charged nuclei are left behind. On the contrary, in the p-type region, the negatively charged nuclei are left behind. Thus, an electric field E from the positive ion region of the n-type region to the negative ion region of the p-type region is established. This electric field region is called "depletion region", because this electric field can quickly remove the free carriers, so the free carriers in this region are exhausted.



Diode under forward bias voltage (core knowledge points)



Forward bias (also known as forward bias) refers to the application of voltage on both sides of the device to reduce the built-in electric field of the PN junction. The decrease of the electric field will destroy the balance of the PN junction, that is, it will reduce the obstacle to the diffusion movement of carriers from one side of the PN junction to the other, and increase the diffusion current.



The increase of the diffusion motion from one end of the PN junction to the other leads to the injection of minority carriers into the edge of the dissipation region. These minority carriers gradually move away from the PN junction due to diffusion and eventually compound with the majority carriers (multipons). The diffusion current under forward bias is also a composite current. The higher the recombination speed, the greater the diffusion current through the PN junction. "Dark saturation current" (I0) is a very important parameter to distinguish two different diodes. I0 is a standard to measure the composite characteristics of a device. The greater the composite rate of the diode, the greater the I0.



Reverse bias



The reverse bias voltage means that an electric field is applied at both ends of the device to increase the PN junction. The larger the built-in electric field in the PN junction, the smaller the probability of carrier diffusion from one section of the PN junction to the other, that is, the smaller the diffusion current.



Ideal diode equation:





I is the net current through the diode;



I0 is the dark saturation current (the current output without illumination), and I0 increases with the increase of T. When the temperature is 300K, kt/q=25.85mv.



V is the voltage applied to both ends of the diode;



Q and K represent the absolute value of charge and Boltzmann constant respectively;



T is the absolute temperature (k).



Collection probability: (can be compared in combination with carrier generation rate)



"Collection probability" describes the probability that the carriers generated by the light irradiating a certain area of the battery will be collected by the PN junction and participate in the current flow. Its size depends on the distance that the photogenerated carriers need to move and the surface characteristics of the battery. The collection probability of all photogenerated carriers in the dissipative region is the same, because the electron hole pairs in this region will be rapidly separated by the electric field. When the carrier is generated in the region where the distance from the electric field is greater than the diffusion length, its collection probability is quite low. Similarly, if the carrier is generated in a region close to a high recombination region such as the battery surface, it will be recombined. The following figure describes the effect of surface passivation and diffusion length on the collection probability.





Quantum efficiency:



The so-called "quantum efficiency" refers to the ratio of the number of carriers collected by the solar cell to the number of incident photons. Quantum efficiency can correspond to both wavelength and photon energy. If all photons at a particular wavelength are absorbed and the minority carriers produced by them can be collected, the quantum efficiency of all photons at that particular wavelength is the same. The quantum efficiency of photons whose energy is lower than the band gap is zero. The following figure will describe the quantum efficiency curve of an ideal solar cell.





Photovoltaic effect (core knowledge points)



When the battery is open, the forward bias voltage of PN junction is at a new point. At this time, the magnitude of photogenerated current is equal to the magnitude of diffusion current, and the direction is opposite, that is, the total current is zero.



When the battery is short circuited, there will be no charge accumulation, because the carriers participate in the flow of the photo generated current, and the short-circuit current is equal to the photo generated current (also equal to the internal diffusion current under the open voltage state).



In the working state, the current is equal to the photogenerated current minus the internal diffusion current of the solar cell.



The short-circuit current is equal to the photo generated current and the drift current under the action of the built-in electric field, which is also the maximum current that the battery can provide.



Under the open circuit voltage, the photogenerated carriers cause a positive bias voltage, which weakens the built-in electric field and increases the diffusion current. The photogenerated current is equal to the diffusion current and the direction is opposite.





In the working state, the current flowing out of the battery is equal to the difference between the photogenerated current and the diffusion current.



The built-in electric field represents an obstacle to the pre diffusion current, so the reduction of the electric field also increases the diffusion current.





Influence of composite mechanism on open circuit voltage (core difficulty)



The smaller the number of electrons at the edge of the PN junction, the wider the depletion region is, and the doping concentration needs to be increased.



Diffusion length. The higher the doping concentration, the lower the diffusion length (the greater the diffusion current), so it is necessary to reduce the doping concentration.



The two need to be balanced.





Interpretation of ECV curve





Bulk resistance (silicon wafer resistivity): the resistance is vertical, and the electrons move vertically and then reach the surface. Therefore, the moving distance is the thickness of the battery, and the cross section is the area of the battery, i.e. R= ρ W/A



Block resistance: the resistance is horizontal, not vertical, that is, the cross-sectional area is equal to the distance L multiplied by the thickness T, so the resistance R= ρ L / (l*t). As long as l is the square side length, the block resistance is only related to the resistivity and the thickness of N zone.



It is very easy to measure the block resistance. Through the four probe test method, the two probes outside provide current, the two probes in the middle generate voltage drop, and the PN junction between N and P regions is used as the bonding body. Note that the test must be in a dark room.





Equivalent circuit diagram of solar cell (core knowledge points)





There are three factors causing series resistance:



First, the current flow through the emission region and the base region of the battery;



Second, contact resistance between metal electrode and silicon;



The third is the metal resistance at the top and back. The main effect of series resistance on the battery is to reduce the filling factor. In addition, when the resistance is too large, it will also reduce the short-circuit current. The series resistance does not affect the open circuit voltage of the battery, because the total current of the battery is zero, so the series resistance is zero.



The significant power loss caused by parallel resistance RSH is usually caused by manufacturing defects.



temperature effect



With the increase of temperature and concentration of intrinsic carriers, the dark current and recombination increase, resulting in the decrease of open circuit voltage.

全國(guó)服務(wù)熱線

13215150267
東莞市星火太陽(yáng)能科技股份有限公司版權(quán)所有 / 備案號(hào):粵ICP備14057282號(hào)-5 /  網(wǎng)站地圖 / 百度統(tǒng)計(jì)  技術(shù)支持: 牛商股份